Related papers: Single bit full adder design using 8 transistors w…

Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…

In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of…

In this paper, two approximate 3*3 multipliers are proposed and the synthesis results of the ASAP-7nm process library justify that they can reduce the area by 31.38% and 36.17%, and the power consumption by 36.73% and 35.66% compared with…

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…

We present an evaluation of a novel on-chip charge detector, called the Single electron Sensitive Read Out (SiSeRO), for charge-coupled device (CCD) image sensor applications. It uses a p-MOSFET transistor at the output stage with a…

We present our latest ASIC, which is used for the readout of Cadmium Telluride double-sided strip detectors (CdTe DSDs) and high spectroscopic imaging. It is implemented in a 0.35 um CMOS technology (X-Fab XH035), consists of 64 readout…

A 12 bit Pipeline ADC fabricated in a 0.18 $\mu$m pure digital CMOS technology is presented. Its nominal conversion rate is 110MS/s and the nominal supply voltage is 1.8V. The effective number of bits is 10.4 when a 10MHz input signal with…

Due to high power consumption and difficulties with minimizing the CMOS transistor size, molecular electronics has been introduced as an emerging technology. Further, there have been noticeable advances in fabrication of molecular wires and…

The progress of the Internet of Things(IoT) technologies and applications requires the efficient low power circuits and architectures to maintain and improve the performance of the increasingly growing data processing systems. Memristive…

Recently, an extremely-air-stable one-dimensional 7-9-7-AGNR was successfully fabricated. To further reveal its potential application in sub-5-nm field-effect transistors (FETs), there is an urgent need to develop integrated circuits. Here,…

To achieve high performance thermoelectric materials and devices, thermoelectric transistors, which integrate thermoelectric effects with transistor technology, represent a promising approach. Here p type Bi0.5Sb1.5Te3 and n type…

Improving Transformer efficiency has become increasingly attractive recently. A wide range of methods has been proposed, e.g., pruning, quantization, new architectures and etc. But these methods are either sophisticated in implementation or…

Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has…

As the size of transistors approaches the mesoscopic scale, existing energy consumption analysis methods exhibit various limits, especially when being applied to describe the non-equilibrium information processing of transistors at…

Transformer inference requires high compute accuracy; achieving this using analog CIMs has been difficult due to inherent computational errors. To overcome this challenge, we propose a Capacitor-Reconfiguring CIM (CR-CIM) to realize high…

State-of-the-art in-memory computation has recently emerged as the most promising solution to overcome design challenges related to data movement inside current computing systems. One of the approaches to performing in-memory computation is…

In recent years, scientific Complementary Metal Oxide Semiconductor (sCMOS) devices have been increasingly applied in X-ray detection, thanks to their attributes such as high frame rate, low dark current, high radiation tolerance and low…

Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless gated Si nanowire transistors. Our primary predictions are…

Semiconductor supply chain is increasingly getting exposed to variety of security attacks such as Trojan insertion, cloning, counterfeiting, reverse engineering (RE) and piracy of Intellectual Property (IP) due to involvement of untrusted…

For experiments at the European X-Ray Free-Electron Laser (XFEL) the Adaptive Gain Integrating Pixel Detector (AGIPD) is under development. The particular requirements for the detector are a high dynamic range of 0, 1 - to more than 10E4…