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Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic…

Mesoscale and Nanoscale Physics · Physics 2016-10-19 Xi Luo , Kuanchen Xiong , James C. M. Hwang , Yuchen Du , PeiDe Ye

Deploying state-of-the-art CNNs requires power-hungry processors and off-chip memory. This precludes the implementation of CNNs in low-power embedded systems. Recent research shows CNNs sustain extreme quantization, binarizing their weights…

Computer Vision and Pattern Recognition · Computer Science 2018-09-12 Andrawes Al Bahou , Geethan Karunaratne , Renzo Andri , Lukas Cavigelli , Luca Benini

We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…

Mesoscale and Nanoscale Physics · Physics 2015-09-14 Samuel J. Hile , Matthew G. House , Eldad Peretz , Jan Verduijn , Daniel Widmann , Takashi Kobayashi , Sven Rogge , Michelle Y. Simmons

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…

Mesoscale and Nanoscale Physics · Physics 2016-11-17 Jiangjiang Gu , Yiqun Liu , Yanqing Wu , Robert Colby , Roy G. Gordon , Peide D. Ye

Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…

Mesoscale and Nanoscale Physics · Physics 2012-07-20 A. N. Vamivakas , Y. Zhao , S. Falt , A. Badolato , J. M. Taylor , M. Atature

Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…

Mesoscale and Nanoscale Physics · Physics 2026-03-17 Yosep Park , Yungyeong Park , Hyeonseok Choi , Subeen Lim , Yeonghun Lee

A large amount of research is currently going on in the field of reversible logic, which have low heat dissipation, low power consumption, which is the main factor to apply reversible in digital VLSI circuit design. This paper introduces…

Hardware Architecture · Computer Science 2015-09-16 Neeraj Kumar Misra , Mukesh Kumar Kushwaha , Subodh Wairya , Amit Kumar

The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a…

Mesoscale and Nanoscale Physics · Physics 2022-11-18 Keshari Nandan , Somnath Bhowmick , Yogesh S. Chauhan , Amit Agarwal

CMOS-transistors circuits have been used as a conventional approach for designing an analog multiplier in modern era of industrial electronics. However, previous studies have shown, that based on the working region of transistors, such as…

Emerging Technologies · Computer Science 2019-08-28 Aidos Kanapyanov , Olga Krestinskaya

The dynamics of a quantum XOR gate operation in a two-qubit system being coupled to a bath of quantum harmonic oscillators is investigated. Upon applying the numerical quasiadiabatic propagator path integral method, we obtain the…

Condensed Matter · Physics 2008-01-29 Michael Thorwart , Peter Hänggi

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned…

Reversible circuits have applications in digital signal processing, computer graphics, quantum computation and cryptography. In this paper, a generalized k*k reversible gate family is proposed and a 3*3 gate of the family is discussed.…

Hardware Architecture · Computer Science 2010-08-20 Md. Rafiqul Islam , Md. Saiful Islam , Muhammad Rezaul Karim , Abdullah Al Mahmud , Hafiz Md. Hasan Babu

A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 C. P. Heij , P. Hadley , J. E. Mooij

This paper present high precision halfwave rectifier circuit in dual phase output mode by 0.5 micrometer CMOS technology, plus or minus 1.5 V low voltage, it has received input signal and sent output current signal, respond in high…

Other Computer Science · Computer Science 2010-01-14 Theerayut Jamjaem , Bancha Burapattanasiri

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m…

We propose a new method to measure the system noise temperature, $T_{\rm sys}$, using a 2-bit analog-to-digital converter (ADC). The statistics of the digitized signal in a four-level quantization brings us information about the bias…

Instrumentation and Methods for Astrophysics · Physics 2015-05-19 Aki Nakatake , Seiji Kameno , Koji Takeda

Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications…

Emerging Technologies · Computer Science 2012-05-10 Ishit Makwana , Vitrag Sheth

Convolutional neural networks (CNN) have been widely used for boosting the performance of many machine intelligence tasks. However, the CNN models are usually computationally intensive and energy consuming, since they are often designed…

Machine Learning · Computer Science 2021-02-04 Yunhe Wang , Mingqiang Huang , Kai Han , Hanting Chen , Wei Zhang , Chunjing Xu , Dacheng Tao

A Low-Power Variable Gain (VG) mm-Wave Low Noise Amplifier (LNA) is designed and simulated in a 28-nm CMOS process. The LNA utilizes a simple, yet novel, technique presented in this paper to vary the small-signal output resistance to…

Signal Processing · Electrical Eng. & Systems 2025-12-02 Harshith Reddy , Pankaj Arora

The "Noisy intermediate-scale quantum" NISQ machine era primarily focuses on mitigating noise, controlling errors, and executing high-fidelity operations, hence requiring shallow circuit depth and noise robustness. Approximate computing is…

Quantum Physics · Physics 2024-08-05 Bhaskar Gaur , Travis S. Humble , Himanshu Thapliyal
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