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Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic…
Deploying state-of-the-art CNNs requires power-hungry processors and off-chip memory. This precludes the implementation of CNNs in low-power embedded systems. Recent research shows CNNs sustain extreme quantization, binarizing their weights…
We compare charge transitions on a deterministic single P donor in silicon using radio frequency reflectometry measurements with a tunnel coupled reservoir and DC charge sensing using a capacitively coupled single electron transistor (SET).…
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…
Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here,…
A large amount of research is currently going on in the field of reversible logic, which have low heat dissipation, low power consumption, which is the main factor to apply reversible in digital VLSI circuit design. This paper introduces…
The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by the long thermal tail of the charge carriers. We propose a…
CMOS-transistors circuits have been used as a conventional approach for designing an analog multiplier in modern era of industrial electronics. However, previous studies have shown, that based on the working region of transistors, such as…
The dynamics of a quantum XOR gate operation in a two-qubit system being coupled to a bath of quantum harmonic oscillators is investigated. Upon applying the numerical quasiadiabatic propagator path integral method, we obtain the…
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned…
Reversible circuits have applications in digital signal processing, computer graphics, quantum computation and cryptography. In this paper, a generalized k*k reversible gate family is proposed and a 3*3 gate of the family is discussed.…
A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…
This paper present high precision halfwave rectifier circuit in dual phase output mode by 0.5 micrometer CMOS technology, plus or minus 1.5 V low voltage, it has received input signal and sent output current signal, respond in high…
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m…
We propose a new method to measure the system noise temperature, $T_{\rm sys}$, using a 2-bit analog-to-digital converter (ADC). The statistics of the digitized signal in a four-level quantization brings us information about the bias…
Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications…
Convolutional neural networks (CNN) have been widely used for boosting the performance of many machine intelligence tasks. However, the CNN models are usually computationally intensive and energy consuming, since they are often designed…
A Low-Power Variable Gain (VG) mm-Wave Low Noise Amplifier (LNA) is designed and simulated in a 28-nm CMOS process. The LNA utilizes a simple, yet novel, technique presented in this paper to vary the small-signal output resistance to…
The "Noisy intermediate-scale quantum" NISQ machine era primarily focuses on mitigating noise, controlling errors, and executing high-fidelity operations, hence requiring shallow circuit depth and noise robustness. Approximate computing is…