Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance associated mainly with the relatively large probe pads. The gate lag and drain lag of the transistor was found to be on the order of 1 us or less, which is consistent with the lack of hysteresis, carrier freeze-out or persistent photoconductivity in DC characteristics. These results confirm that the phosphorene MOSFET can be a viable microwave transistor for both small-signal and large-signal applications.
@article{arxiv.1603.05156,
title = {Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors},
author = {Xi Luo and Kuanchen Xiong and James C. M. Hwang and Yuchen Du and PeiDe Ye},
journal= {arXiv preprint arXiv:1603.05156},
year = {2016}
}