The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for electronic circuits based on 2D semiconductors on flexible and rigid substrates. Here, we present a systematic study of top-gated trilayer MoS2 RF transistors with gate lengths scaled down to 70 and 40 nm. In addition, by introducing edge-contacted injection of electrons in trilayer MoS2 devices, we decrease the contact resistance and as a result obtain the highest cutoff frequency of 6 GHz before the de-embedding procedure and 25 GHz after the de-embedding procedure.
@article{arxiv.1609.00701,
title = {High-frequency, scaled MoS2 transistors},
author = {Daria Krasnozhon and Subhojit Dutta and Clemens Nyffeler and Yusuf Leblebici and Andras Kis},
journal= {arXiv preprint arXiv:1609.00701},
year = {2016}
}
Comments
in Electron Devices Meeting (IEDM), 2015 IEEE International