The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and two dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42 m2V-1s-1 at Vg= 0V, a small pinch off gate voltage (Vp) of -0.25V, a maximum extrinsic transconductance (gm) of 4.94 S/mm and a drain current density of more than 6.04 A/mm. A short-circuit current-gain cut-off frequency (fT) of 374 GHz and a maximum oscillation frequency (fmax) of 645 GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.
@article{arxiv.1606.08119,
title = {Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications},
author = {R. Islam and M. M. Uddin and M. Mofazzal Hossain and M. B. Santos and M. A. Matin and Y. Hirayama},
journal= {arXiv preprint arXiv:1606.08119},
year = {2016}
}