Related papers: Single bit full adder design using 8 transistors w…

Circuit design based on Quantum-dots Cellular Automata technology offers power-efficiency and nano-size circuits. It is an attractive alternative to CMOS technology. The XOR gate is a widely used building element in arithmetic circuits. An…

This paper describes a CMOS analogy voltage supper buffer designed to have extremely low static current Consumption as well as high current drive capability. A new technique is used to reduce the leakage power of class-AB CMOS buffer…

This article presents novel high speed and low power full adder cells based on carbon nanotube field effect transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and second one (CN9P8GBUFF)…

With scaling of Vt sub-threshold leakage power is increasing and expected to become significant part of total power consumption In present work three new configurations of level shifters for low power application in 0.35{\mu}m technology…

Power consumption has emerged as a primary design constraint for integrated circuits (ICs). In the Nano meter technology regime, leakage power has become a major component of total power. Full adder is the basic functional unit of an ALU.…

Full Adder is one of the critical parts of logical and arithmetic units. So, presenting a low power full adder cell reduces the power consumption of the entire circuit. Also, using Nano-scale transistors, because of their unique…

A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…

The implementation of a quaternary 1-digit adder composed of a 2-bit binary adder, quaternary to binary decoders and binary to quaternary encoders is compared with several recent implementations of quaternary adders. This simple…

Reciprocal Quantum Logic combines the speed and power-efficiency of single-flux quantum superconductor devices with design features that are similar to CMOS. We have demonstrated an 8-bit carry look-ahead adder in the technology using…

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…

The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and…

The MUX implementation of ternary half adders and full adders using predecessor and successor functions lead to the most efficient efficient implementation using the smallest transistor count. These designs are compared with the binary…

Full adders are important components in applications such as digital signal processors (DSP) architectures and microprocessors. Apart from the basic addition adders also used in performing useful operations such as subtraction,…

A low-power precision-scalable processor for ConvNets or convolutional neural networks (CNN) is implemented in a 40nm technology. Its 256 parallel processing units achieve a peak 102GOPS running at 204MHz. To minimize energy consumption…

This paper describes a 8 bits, 20 Msamples/s pipeline analog-to-digital converter implemented in 0.6 \mu m CMOS technology with a total power dissipation of 75.47 mW. Circuit techniques used include a precise comparator, operational…

This paper proposes a Low-Power, Energy Efficient 4-bit Binary Coded Decimal (BCD) adder design where the conventional 4-bit BCD adder has been modified with the Clock Gated Power Gating Technique. Moreover, the concept of DVT (Dual-vth)…

The XOR Boolean logic gate is widely used in many applications such as encryption (XOR ciphers), binary addition (half- and full-adders), error detection (parity bits), etc. but is challenging to construct because of its demanding…

This paper presents the design of an 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors, to evaluate its feasibility in electric…

We demonstrate the proof of principle for a ternary adder using silicon metal-on-insulator single electron transistors (SET). Gate dependent rectifying behavior of a single electron transistor results in a robust three-valued output as a…

An 8 x 8 mixed-signal matrix multiplier architecture based on 64 hybrid capacitor-resistor multiplying digital to analogue converters implemented in a 65 nm CMOS technology was developed for the application of blind source separation of…