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The ATLAS pixel detector consists of 1744 identical silicon pixel modules arranged in three barrel layers providing coverage for the central region, and three disk layers on either side of the primary interaction point providing coverage of…

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation.…

We have developed a wide-field mosaic CCD camera, MOA-cam3, mounted at the prime focus of the Microlensing Observations in Astrophysics (MOA) 1.8-m telescope. The camera consists of ten E2V CCD4482 chips, each having 2kx4k pixels, and…

The Phase-1 upgrade of the CMS pixel detector is built out of four barrel layers (BPix) and three forward disks in each endcap (FPix). It comprises a total of 124M pixel channels in 1,856 modules, and it is designed to withstand…

We report on a large active area (15x15mm2), high channel density (470 pixels/mm2), self-triggering CMOS analog chip that we have developed as pixelized charge collecting electrode of a Micropattern Gas Detector. This device, which…

Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and…

Low-Gain Avalanche Diode (LGAD) sensors, offering timing resolutions of the order of tens of picoseconds, are being widely adopted in particle physics experiments and related applications. As these applications scale to large numbers of…

Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 $\mu$m, produced at CiS, and 100-200 $\mu$m thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and…

The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct…

A MHz frame rate X-ray area detector (LPD - Large Pixel Detector) is under development by the Rutherford Appleton Laboratory for the European XFEL. The detector will have 1 million pixels and allows analogue storage of 512 images taken at…

For the first time, demonstrated is the active-mode CAOS (i.e., Coded Access Optical Sensor) camera. The design demonstrated uses a hybrid approach to both optical device engagement and time-frequency CAOS mode operations. Specifically,…

Dense tracking environments in experiments at CERN's High-Luminosity LHC and future FCC experiments call for an increased use of timing information in addition to the position measurement of pixel detectors. This adds one dimension to the…

Compact gamma cameras with a square-shaped monolithic scintillator crystal and an array of silicon photomultipliers (SiPMs) are actively being developed for applications in areas such as small animal imaging, cancer diagnostics and…

Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the…

We report a large area photo-diode based homodyne detector for free-space quantum coherent communication. The detector's performance is studied in terms of detection bandwidth and electronic noise for shot-noise limited quantum signal…

Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their…

Silicon Photomultipliers (SiPMs) are an excellent candidate for the development of large-area light sensors. Large SiPM-based detectors require low-noise pre-amplifiers to maximize the signal coupling between the sensor and the readout…

This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been…

Harnessing low energy photons is of paramount importance for multi-junction high efficiency solar cells as well as for thermo-photovoltaic applications. However, semiconductor absorbers with bandgap lower than 0.8 eV have been limited to…

Results from the simulations of a Compton gamma camera based on compact configuration of detectors consisting in two detection modules, each of them having two stages of high-resolution position- and energy-sensitive radiation detectors…