Related papers: Development of Active Pixel Photodiode Sensors for…
We propose a joint TDC and multi-time-gated imaging single-photon avalanche diode LiDAR sensor featuring a maximum detection range of 108m with a minimum depth resolution (least significant bit) of 2.93mm, fabricated in 110nm CMOS…
CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called…
Two large-area, low noise, high speed fluorescence detectors have been built. One detector consists of a photodiode with an area of 28 mm x 28 mm and a low noise transimpedance amplifier. This detector has a input light-equivalent spectral…
Space-based gamma-ray telescopes such as the Fermi Large Area Telescope have used single sided silicon strip detectors to track secondary charged particles produced by primary gamma-rays with high resolution. At the lower energies targeted…
We present a Ge-on_Si CMOS image sensor with backside illumination for the near-infrared electromagnetic waves, wavelengths range 300-1700nm, detection essential for optical sensor technology. The micro-holes help to enhance the optical…
The next generation of MAPS for future tracking detectors will have to meet stringent requirements placed on them. One such detector is the ALICE ITS3 that aims to be very light at 0.07% X/X$_{0}$ per layer and have a low power consumption…
We present an InGaAs/InP avalanche photodiode with an active quenching circuit on an ASIC (application specific integrated circuit) that is capable of operating in both gated and free-running modes. The 1.6mm2 ASIC chip is fabricated using…
The quantum noise of light fundamentally limits optical phase sensors. A semiclassical picture attributes this noise to the random arrival time of photons from a coherent light source such as a laser. An engineered source of squeezed states…
We present a method of embedding a Monolithic Active Pixel Sensor (MAPS) into a flexible printed circuit board (FPC) and its interconnection by means of through-hole copper plating. The resulting assembly, baptised "MAPS foil", is a…
CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…
Spectroscopic measurements are presented using the PID350 pixelated gamma radiation detectors. A high-speed data acquisition system has been developed in order to reduce the data loss during the data reading in case of a high flux of…
An x-ray detector using a liquid-helium cooled large-area silicon PIN photodiode has been developed along with a tailor-made charge sensitive preamplifier whose first-stage JFET has been cooled. The operating temperature of the JFET has…
A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times…
The Micro Pixel Chamber (mu-PIC) using resistive electrodes has been developed and tested. The surface cathodes are made from resistive material, by which the electrical field is reduced when large current is flowed. Two-dimensional…
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at…
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…
The visualization of pure phase objects by wavefront sensing has important applications ranging from surface profiling to biomedical microscopy, and generally requires bulky and complicated setups involving optical spatial filtering,…
We present a novel single-photon detector based on a vacuum tube incorporating a photocathode, a microchannel plate (MCP), and a Timepix4 CMOS ASIC functioning as a pixelated anode. Designed to handle photon rates up to 1 billion per second…
An innovative photosensitive gaseous detector, consisting of a GEM like amplification structure with double layered electrodes (instead of commonly used metallic ones) coated with a CsI reflective photocathode, is described. In one of our…