Related papers: Development of Active Pixel Photodiode Sensors for…
We are developing an imaging polarimeter by combining a fine-pixel CMOS image sensor with a coded aperture mask as part of the cipher project, aiming to achieve X-ray polarimetry in the energy range of…
In MicroPattern Gas Detectors (MPGD) when the pixel size is below 100 micron and the number of pixels is large (above 1000) it is virtually impossible to use the conventional PCB read-out approach to bring the signal charge from the…
The pCam6060 photodetecting system was developed at SAO RAS and is based on the GSENSE6060BSI photodetector manufactured by GPixel (China) with a frame format of 6144x6144 active pixels and a pixel size of 10 mkm. The readout speed reached…
The effective and convenient detection of single photons via advanced detectors with a large active area is becoming significant for quantum and classical applications. This work demonstrates the fabrication of a superconducting microstrip…
Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received…
We report on the production of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted…
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To…
Recent advancements in particle physics demand pixel detectors that can withstand increased luminosity in the future collider experiments. In response, MALTA, a novel monolithic active pixel detector, has been developed with a cutting-edge…
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single…
Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many…
A novel approach for designing the next generation of vertex detectors foresees to employ wafer-scale sensors that can be bent to truly cylindrical geometries after thinning them to thicknesses of 20-40$\mu$m. To solidify this concept, the…
Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider…
A highly sensitive photodetection system with a detection limit of 1 photon/s was developed. This system uses a commercially available 200-mm-diameter silicon avalanche photodiode (APD) and an in-house-developed ultralow-noise readout…
CMOS detectors offer many advantages over CCDs for optical and UV astronomical applications, especially in space where high radiation tolerance is required. However, astronomical instruments are most often designed for low light-level…
Digital camera sensors utilize color filters on photodiodes to achieve color selectivity. As color filters and photosensitive silicon layers are separate elements, these sensors suffer from optical cross-talk, which sets limits to the…
The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 micron) motivate billion-pixel X-ray cameras (BiPC-X) based on…
We are investigating the feasibility of using CMOS foundries to fabricate silicon detectors, both for pixels and for large-area strip sensors. The availability of multi-layer routing will provide the freedom to optimize the sensor geometry…
Recent progress on the development of very low noise high purity germanium ionization spectrometers has produced an instrument of 1.2 kg mass and excellent noise performance. The detector was installed in a low-background cryostat intended…
This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they…
A Compton camera is the most promising approach for gamma-ray detection in the energy region from several hundred keV to MeV, especially for application in high energy astrophysics. In order to obtain good angular resolution, semiconductor…