Related papers: Development of Active Pixel Photodiode Sensors for…

A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in…

A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to…

We report on vertically-illuminated photodiodes fabricated in the GlobalFoundries 45nm 12SOI node and on a packaging concept for optically-interconnected chips. The photodiodes are responsive at 1180 nm, a wavelength currently used in…

Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the…

We demonstrated a CMOS imaging system that adapts each pixel's exposure and sampling rate to capture high dynamic range (HDR) videos. The system consist of a custom designed image sensor with pixel-wise exposure configurability and a…

Accurate 3D imaging is essential for machines to map and interact with the physical world. While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of…

We present a 'digital SiPM' photo-detection chip combining single photon sensitive avalanche photo diodes and CMOS readout electronics on a single die. The chip has a size of $8046\times9032\,\mu m^2$ with $72.5\%$ of photo sensitive area.…

Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small…

A Set of new MPGD-based Photon Detectors is being built for the upgrade of COMPASS RICH-1. The detectors cover a total active area of 1.4 m$^2$ and are based on a hybrid architecture consisting of two THGEM layers and a Micromegas. A CsI…

We demonstrate integration of an amorphous silicon photodetector with thin film lithium niobate photonic platform operating in the visible wavelength range. We present the details of the design, fabrication, integration and experimental…

Space-based gamma-ray telescopes such as the Fermi Large Area Telescope have used single sided silicon strip detectors to measure the position of charged particles produced by incident gamma rays with high resolution. At energies in the…

As conventional frame-based cameras suffer from high energy consumption and latency, several new types of image sensors have been devised, with some of them exploiting the sparsity of natural images in some transform domains. Instead of…

Conventional image sensors are only responsive to the intensity variation of the incoming light wave. By encoding the wavefront information into the balanced detection scheme, we demonstrate an image sensor pixel design that is capable to…

A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch…

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…

Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems.…

Complimentary metal-oxide-semiconductor (CMOS) compatible quantum technology enables scalable integration with the classical readout and control electronics needed to build quantum computers. Homodyne detectors have applications across…

This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and…

MIMOSIS is a CMOS Monolithic Active Pixel Sensor developed to equip the Micro Vertex Detector of the Compressed Baryonic Matter (CBM) experiment at FAIR/GSI. The sensor will combine an excellent spatial precision of $5~\mu m$ with a time…

We have developed a position-sensitive scintillation camera with a large area absorber for use as an advanced Compton gamma-ray camera. At first we tested GSO(Ce) crystals. We compared light output from the GSO(Ce) crystals under various…