Related papers: Development of Active Pixel Photodiode Sensors for…
This paper reports on the behaviour of Silicon Photomultiplier (SiPM) detectors under continuous light. Usually, the bias circuit of a SiPM has a resistor connected in series to it, which protects the sensor from drawing too high current.…
In the hard X rays domain, the phase shift of the wave passing through the soft materials like tissues is typically three orders of magnitude larger than the absorption. Therefore the phase-sensitive X-ray imaging methods can obtain…
We are developing a new photon detector with micro pattern gaseous detectors. A semitransparent CsI photocathode is combined with 10cm$\times$10cm GEM/$\mu$PIC for the first prototype which is aimed for the large liquid Xe detectors. Using…
Advances in CMOS technology have made high resolution image sensors possible. These image sensor pose significant challenges in terms of the amount of raw data generated, energy efficiency and frame rate. This paper presents a new design…
The Smart Pixel Camera is a new camera for imaging atmospheric Cherenkov telescopes, suited for a next generation of large multi-telescope ground based gamma-ray observatories. The design of the camera foresees all electronics needed to…
We design and demonstrate a resonant-type differential photodetector for low-noise quantum homodyne measurement at 500MHz optical sideband with 17MHz of bandwidth. By using a microwave monolithic amplifier and a discrete voltage buffer…
Optical modulators in the visible regime have far-reaching applications from biophotonics to quantum science. Implementations of such optical phase modulators on a complementary metal-oxide-semiconductor (CMOS) compatible platform have been…
Originally designed for night-vision equipment, InGaAs detectors are beginning to achieve background-limited performance in broadband imaging from the ground. The lower cost of these detectors can enable multi-band instruments, arrays of…
Monitoring plant health increasingly relies on leaf-mounted sensors that provide real-time physiological data, yet efficiently locating and sampling these sensors in complex agricultural environments remains a major challenge. We present an…
High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50$\mu m$ x 150$\mu m$, fabricated using TSI 180nm HV-CMOS technology, is a full reticle-size…
Ultraviolet (UV) imagers are important for a variety of applications, such as quality inspection in the semiconductor industry, forensics and food quality inspection, but are often costly because they require dedicated semiconductor process…
We present the first 1Mpixel SPAD camera ever reported. The camera features 3.8ns time gating and 24kfps frame rate; it was fabricated in 180nm CIS technology. Two pixels have been designed with a pitch of 9.4$\mu$m in 7T and 5.75T…
In this paper, we present the results of rigorous electromagnetic broadband simulations applied to CMOS image sensors as well as experimental measurements. We firstly compare the results of 1D, 2D, and 3D broadband simulations in the…
We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly…
A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92{\deg} beamwidth, 15.3{\deg}…
We experimentally demonstrate an imaging technique based on quantum noise modification after interaction with an opaque object. By using a homodyne-like detection scheme, we eliminate the detrimental effect of the camera's dark noise,…
Future space-based X-ray telescope missions are likely to have significantly increased demands on detector read out rates due to increased collection area, and there will be a desire to minimize radiation damage in the interests of…
Monolithic Active Pixel Sensors (MAPS) combine the sensing part and the front-end electronics in the same silicon layer, making use of CMOS technology. Profiting from the progresses of this commercial process, MAPS have been undergoing…
This paper presents a new FDTD-based optical simulation model dedicated to describe the optical performances of CMOS image sensors taking into account diffraction effects. Following market trend and industrialization constraints, CMOS image…
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon…