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Steep-slope $\beta$-Ga$_2$O$_3$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…
Based on the ASIC layout level simulation of 7 types of adder structures each of four different sizes, i.e. a total of 28 adders, we propose expressions for the width of each of the three regions of the final Carry Propagate Adder (CPA) to…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
A new method for implementing the kinetic energy operator for real-space, grid-based electronic structure codes is developed. It is based on multi-order Adaptive Finite Differencing (AFD) and uses atomic pseudo orbitals produced by the…
With the increase of the speed of computers, timing and power requirements are becoming crucial for memory devices. The main objective of the paper is to modify 180nm CMOS sense amplifier design by using memristive devices and improve the…
We experimentally demonstrate the realization of a half-polarization-maintaining (half-PM) fiber laser, in which mode-locking is provided by a reflective multimode-interference saturable absorber (SA). In the specially designed SA, linearly…
Fullerene like cages and naonotubes of carbon and other inorganic materials are currently under intense study due to their possible technological applications. First principle simulations of these materials are computationally challenging…
The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrodinger-Poisson (QCSP) and…
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…
The rapid adaptation of data driven AI models, such as deep learning inference, training, Vision Transformers (ViTs), and other HPC applications, drives a strong need for runtime precision configurable different non linear activation…
We consider network-assisted full-duplex (NAFD) cell-free massive multiple-input multiple-output (CF-mMIMO) systems, where full-duplex (FD) transmission is virtually realized via half-duplex (HD) hardware devices. The HD access points (APs)…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
Recent advances in multimodal learning have motivated the integration of auxiliary modalities such as text or vision into time series (TS) forecasting. However, most existing methods provide limited gains, often improving performance only…
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a…
This paper presents a low-latency hardware accelerator for modular polynomial multiplication for lattice-based post-quantum cryptography and homomorphic encryption applications. The proposed novel modular polynomial multiplier exploits the…
Modern Neural Network (NN) architectures heavily rely on vast numbers of multiply-accumulate arithmetic operations, constituting the predominant computational cost. Therefore, this paper proposes a high-throughput, scalable and energy…
Precision instrumentation systems, such as optical receivers and other current-output measurement systems, often contain a transimpedance amplifier (TIA). The commonly used resistive feedback TIA (RF-TIA) has a drawback in its practical…
This paper presents a structural design of the hardware-efficient module for implementation of convolution neural network (CNN) basic operation with reduced implementation complexity. For this purpose we utilize some modification of the…