Related papers: Silicon-On-Insulator Lateral Dual Sidewall Schottk…
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic chemical vapor deposition (MOCVD) with an ultra-low ideality factor ({\eta}) of 1.65, a breakdown voltage…
Many consumer technologies and scientific methods rely on photodetection of infrared light. We report a Schottky photodetector operating below silicon's band gap energy, through hot carrier injection from a nanoscale metallic absorber. Our…
High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses is a key limiting factor when designing inductors with high Q-factors. In this context, we report a substrate…
In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes.…
Carbon nanotube Schottky diodes have been fabricated in an all-photolithographic process using dissimilar contact metals on high-frequency compatible substrates (quartz and sapphire). Diodes show near-ideal behavior, and rectify currents of…
We are developing monolithic pixel sensors based on a 0.2 $\mu$m fully-depleted Silicon-on-Insulator (SOI) technology for HEP experiment applications. The total ionizing dose (TID) effect is the major issue in the applications for hard…
The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially…
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However,…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
Current understanding of higher-order topological insulators (HOTIs) is based primarily on crystalline materials. Here, we propose that HOTIs can be realized in quasicrystals. Specifically, we show that two distinct types of second-order…
Silicon-on-insulator (SOI) enables for capability improvement of modern information processing systems by replacing some of their electrical counterparts. With the miniaturization of SOI platform, backscattering suppression is one of the…
Second-order topological insulators (SOTIs) are the topological phases of matter in d dimensions that manifest (d-2)-dimensional localized modes at the intersection of the edges. We show that SOTIs can be designed via stacked Chern…
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such…
We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation…
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain ($\beta$). In this paper, we characterize lateral bipolar junction transistors (LBJTs) fabricated on silicon-on-insulator…
Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe$_2$ field-effect transistors whose sense of current rectification is controllable through a…
Novel group IVV 2D semiconductors (e.g., GeAs and SiAs) has arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has wide tunable bandgap, excellent thermodynamic stability, and…
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson…
In this research, we developed a low-power silicon photonics foundry-fabricated slow-light thermal phase shifter (SLTPS) where the slow-light (SL) effect is achieved using an integrated Bragg grating (BG) waveguide. Heating the grating…
In ambient electromagnetic energy harvesting systems, the input power to the rectifier is low. To improve rectification efficiency, Schottky diodes, which are sensitive to low power, are commonly selected as rectifying devices to convert…