Related papers: Silicon-On-Insulator Lateral Dual Sidewall Schottk…
We propose two mechanisms to realize the second order topological insulator (SOTI) state in spinless hexagonal lattices, viz., chemical modification and anti-Kekul\'e/Kekul\'e distortion of hexagonal lattice. Correspondingly, we construct…
The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies.…
Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per…
In the last decades, the applications of power inverter increased rapidly. As a result, in spite of rectifier, an inverter with a high-power electronic oscillator has capability to convert direct current (DC) into alternating current (AC)…
Variability and lack of control in the nature of contacts between metal/MoS2 interface is a major bottleneck in the realisation of high-performance devices based on layered materials for several applications. In this letter, we report on…
We compare modulator designs on thick-film and thin-film silicon-on-insulator (SOI) substrates based on the carrier-depletion effect. This effect exhibits a lower junction capacitance as compared to its injection counterparts, leading to a…
In future full-duplex communications, the cancellation of self-interference (SI) arising from hardware non-idealities will play an important role in the design of mobile-scale devices. To this end, we introduce an optimal digital SI…
Reconfigurable intelligent surfaces (RIS) and orthogonal time-frequency space (OTFS) modulation have gained attention in recent wireless research. RIS technology aids communication by reflecting the incident electromagnetic waves towards…
A silicon microstrip detector (SSD) has been developed to have state of the art spatial resolution and a large sensitive area under stringent power constraints. The design incorporates three floating strips with their bias resistors…
Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…
We have fabricated light emitting diodes (LEDs) with Schottky contacts on Si-nanocrystals formed by simple techniques as used for standard Si devices. Orange electroluminescence (EL) from these LEDs could be seen with the naked eye at room…
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact…
We numerically study silicon waveguides on silica showing that it is possible to simultaneously guide optical and acoustic waves in the technologically important silicon on insulator (SOI) material system. Thin waveguides, or fins, exhibit…
Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency {\eta}wp of Ge-on-Si lasers. Side stressors only turned out to be a more efficient…
We present a deep learning approach for repairing sequential circuits against formal specifications given in linear-time temporal logic (LTL). Given a defective circuit and its formal specification, we train Transformer models to output…
Hardware distortion in large intelligent surfaces (LISs) may limit their performance when scaling up such systems. It is of great importance to model the non-ideal effects in their transceivers to study the hardware distortions that can…
A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one dimensional (1D) silicon nanopillars onto a two dimensional (2D) silicon membrane. Primary electrons are…
In this contribution we investigate the impact of lateral leakage for linear and nonlinear optical waveguides in lithium niobate on insulator (LNOI). Silicon nitride (SiN) loaded and direct patterned lithium niobate cross-sections are…
Many of the characteristics of Silicon Photomultipliers (SiPMs), such as high Photon Detection Efficiency (PDE), are well matched to the requirements of the cameras of the Small-Sized Telescopes (SSTs) proposed for the Cherenkov Telescope…
In frequency-division duplex (FDD) massive multiple-input multiple-output (MIMO) systems, the growing number of base station antennas leads to prohibitive feedback overhead for downlink channel state information (CSI). To address this…