Related papers: Silicon-On-Insulator Lateral Dual Sidewall Schottk…
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these…
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…
To improve speech intelligibility in complex everyday situations, the human auditory system partially relies on Interaural Time Differences (ITDs) and Interaural Level Differences (ILDs). However, hearing impaired (HI) listeners often…
The "LiC Detector Toy" is a fast single-track simulation and reconstruction tool, aiming at the optimization of tracking detector design, i.e. geometric layout and material budgets. Its implementation is based on the MATLAB system.…
Application of new detectors using Silicon-On-Insulator (SOI) technology has been started in the Photon Factory, KEK. This project has two purposes. The first purpose is to develop a pulse-counting-type X-ray detector which can be used in…
We have demonstrated a simple and accurate method for characterizing the capacitance of Graphene/n-Si Schottky junction solar cells (GSSCs) which embed the metal-oxide-semiconductor (MOS) capacitor. We measured two types of GSSCs, one with…
We report the fabrication and photovoltaic performance of a rotationally faulted multilayer graphene (rf-MLG)/n-Si Schottky junction device. A thickness-controlled rf-MLG is synthesized using a 5 {\mu}m Ni foil catalyst via the chemical…
Topological insulators have been extended to higher-order versions that possess topological hinge or corner states in lower dimensions. However, their robustness against disorder is still unclear. Here, we theoretically investigate the…
3D NAND flash memory with advanced multi-level cell techniques provides high storage density, but suffers from significant performance degradation due to a large number of read-retry operations. Although the read-retry mechanism is…
The Lippmann--Schwinger--Lanczos (LSL) algorithm has recently been shown to provide an efficient tool for imaging and direct inversion of synthetic aperture radar data in multi-scattering environments [17], where the data set is limited to…
The deep learning model Transformer has achieved remarkable success in the hyperspectral image (HSI) restoration tasks by leveraging Spectral and Spatial Self-Attention (SA) mechanisms. However, applying these designs to remote sensing (RS)…
In this paper we construct fully symmetric wavefunctions for the spin-polarized fractional Chern insulators (FCI) and time-reversal-invariant fractional topological insulators (FTI) in two dimensions using the parton approach. We show that…
Recent advances of end-to-end models have outperformed conventional models through employing a two-pass model. The two-pass model provides better speed-quality trade-offs for on-device speech recognition, where a 1st-pass model generates…
The protected surface conduction of topological insulators is in high demand for the next generation of electronic devices. What is needed to move forward are robust settings where topological surface currents can be controlled by simple…
The emerging field of topology has brought device effects to a new level. Higher-order topological insulators (HOTIs) go beyond traditional descriptions of bulk-edge correspondence, broadening the understanding of topologically insulating…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performance of GeSn lasers is to use a high Sn content, which…
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…
The lack of straightforward epitaxial integration of useful telecom lasers on silicon remains the major bottleneck for bringing optical interconnect technology down to the on-chip level. Crystalline silicon itself, an indirect…
Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be…