Related papers: Silicon-On-Insulator Lateral Dual Sidewall Schottk…
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…
Silicon photonics, with its CMOS compatibility and high integration density, has enabled a wide range of novel applications. Harnessing stimulated Brillouin scattering (SBS), an optomechanic interaction between optical and GHz acoustic…
While Si clathrates have been explored as promising direct bandgap semiconductors, their practical optoelectronic performance has been limited by high doping levels and structural defects. Hydrogen has long been used to improve the…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
We construct a bosonic analog of a two-dimensional topological Dirac Semi-Metal (DSM). The low-energy description of the most basic 2D DSM model consists of two Dirac cones at positions $\pm\mathbf{k}_0$ in momentum space. The local…
Fully depleted (FD) Silicon on Insulator (SOI) metal oxide Field Effect Transistor (MOSFET) Is the Leading Contender for Sun 65nm Regime. This paper presents a study of effects of work functions of metal gate on the performance of FD-SOI…
We are developing position sensitive silicon detectors (PSDs) which have an electrode at each of four corners so that incident position of a charged particle can be obtained with signal from the electrodes. It is expected that the position…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate…
A serializer ASIC and a VCSEL driver ASIC are needed for the front-end optical data transmission in the ATLAS liquid argon calorimeter readout phase-I upgrade. The baseline ASICs are the serializer LOCx2 and the VCSEL driver LOCld, designed…
Semiconductor mode-locked lasers can be used in a variety of applications ranging from multi-carrier sources for WDM communication systems to time base references for metrology. Their packaging in compact chip- or module-level systems…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
In this paper, a new lattice concept called the locally symmetric lattice is proposed for storage ring light sources. In this new lattice, beta functions are made locally symmetric about two mirror planes of the lattice cell, and the phase…
The STAR Silicon Strip Detector (SSD) completes the three layers of the Silicon Vertex Tracker (SVT) to make an inner tracking system located inside the Time Projection Chamber (TPC). This additional fourth layer provides two dimensional…
Because the conductivity of organic semiconductors is very low, a useful model for the organic diode consists of treating the organic layer as an insulator, an approximation often referred to as the metal-insulator-metal (MIM) model.…
This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/degrees C, preliminary…
We present the design and test results of two optical data transmission ASICs for the High-Luminosity LHC (HL-LHC) experiments. These ASICs include a two-channel serializer (LOCs2) and a single-channel Vertical Cavity Surface Emitting Laser…
We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2…
Self-injection locking is a dynamic phenomenon which provides passive stabilization of a lasers emission frequency via resonant optical feedback. The stabilization coefficient depends on the level of resonant feedback and quality factor of…
Optical lattices play a significant role in the field of cold atom physics, particularly in quantum simulations. Varying the lattice period is often a useful feature, but it presents the challenge of maintaining lattice phase stability in…