In this work we present silicon process compatible, stable and reliable (>108cycles), high non-linearity ratio at half-read voltage (>5×105), high speed (<60ns) low operating voltage (<2V) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays.
@article{arxiv.1605.02757,
title = {Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays},
author = {Cheng-Chih Hsieh and Yao-Feng Chang and Ying-Chen Chen and Heng-Lu Chang and Davood Shahrjerdi and Sanjay. K. Banerjee},
journal= {arXiv preprint arXiv:1605.02757},
year = {2016}
}