Higher-Order Topological Insulators in Quasicrystals
Abstract
Current understanding of higher-order topological insulators (HOTIs) is based primarily on crystalline materials. Here, we propose that HOTIs can be realized in quasicrystals. Specifically, we show that two distinct types of second-order topological insulators (SOTIs) can be constructed on the quasicrystalline lattices (QLs) with different tiling patterns. One is derived by using a Wilson mass term to gap out the edge states of the quantum spin Hall insulator on QLs. The other is the quasicrystalline quadrupole insulator (QI) with a quantized quadrupole moment. We reveal some unusual features of the corner states (CSs) in the quasicrystalline SOTIs. We also show that the quasicrystalline QI can be simulated by a designed electrical circuit, where the CSs can be identified by measuring the impedance resonance peak. Our findings not only extend the concept of HOTIs into quasicrystals but also provide a feasible way to detect the topological property of quasicrystals in experiments.
Cite
@article{arxiv.1904.09932,
title = {Higher-Order Topological Insulators in Quasicrystals},
author = {Rui Chen and Chui-Zhen Chen and Jin-Hua Gao and Bin Zhou and Dong-Hui Xu},
journal= {arXiv preprint arXiv:1904.09932},
year = {2020}
}
Comments
5 pages, 4 figures, 8 pages of supplementary materials, accepted by Physical Review Letters