English

Higher-Order Topological Insulators in Quasicrystals

Mesoscale and Nanoscale Physics 2020-01-24 v4 Disordered Systems and Neural Networks

Abstract

Current understanding of higher-order topological insulators (HOTIs) is based primarily on crystalline materials. Here, we propose that HOTIs can be realized in quasicrystals. Specifically, we show that two distinct types of second-order topological insulators (SOTIs) can be constructed on the quasicrystalline lattices (QLs) with different tiling patterns. One is derived by using a Wilson mass term to gap out the edge states of the quantum spin Hall insulator on QLs. The other is the quasicrystalline quadrupole insulator (QI) with a quantized quadrupole moment. We reveal some unusual features of the corner states (CSs) in the quasicrystalline SOTIs. We also show that the quasicrystalline QI can be simulated by a designed electrical circuit, where the CSs can be identified by measuring the impedance resonance peak. Our findings not only extend the concept of HOTIs into quasicrystals but also provide a feasible way to detect the topological property of quasicrystals in experiments.

Keywords

Cite

@article{arxiv.1904.09932,
  title  = {Higher-Order Topological Insulators in Quasicrystals},
  author = {Rui Chen and Chui-Zhen Chen and Jin-Hua Gao and Bin Zhou and Dong-Hui Xu},
  journal= {arXiv preprint arXiv:1904.09932},
  year   = {2020}
}

Comments

5 pages, 4 figures, 8 pages of supplementary materials, accepted by Physical Review Letters

R2 v1 2026-06-23T08:46:29.976Z