Related papers: Silicon-On-Insulator Lateral Dual Sidewall Schottk…
We present highly accurate and easy to implement, improved lumped semiconductor optical amplifier (SOA) models for both single-pass and reflective semiconductor optical amplifiers (RSOA). The key feature of the model is the inclusion of the…
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the current transport mechanisms in both forward and reverse…
Charge transport through metal-Mott-insulator interfaces is studied and compared with that through metal-band-insulator interfaces. For band insulators, rectification has been known to occur owing to a Schottky barrier, which is produced by…
In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…
We numerically demonstrate a new type of waveform-selective metasurface that senses the difference in incoming waveforms or pulse widths at the same frequency. Importantly, the proposed structure contains precise rectifier circuits that,…
Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film…
This chapter reviews the fundamentals of continuous and discrete Linear Time-Invariant (LTI) systems with Single Input-Single Output (SISO). We start from the general notions of signals and systems, the signal representation problem and the…
A Copper-Zinc-Tin-Sulphide (CZTS)based solar cell with a modified ce3ll configuration of Mo/SnS/CZTS/SnS2/ZnO is simulated using SCAPS. An SnS2 buffer layer is used in simulation instead of the standard CdS layer. An additional back surface…
In this paper, we propose a new Extended-p+ Stepped Gate (ESG) thin film SOI LDMOS with an extended-p+ region beneath the source and a stepped gate structure in the drift region of the LDMOS. The hole current generated due to impact…
Ultrathin two-dimensional semiconductors obtained from layered transition-metal dichalcogenides such as molybdenum disulfide (MoS2) are promising for ultimately scaled transistors beyond Si. Although the shortening of the semiconductor…
Miniaturized or even microscale generators that could effectively and persistently converse weak and random mechanical energy from environments into electricity promise huge applications in the internet of things, sensor networks, big data,…
In this paper, we introduce a new approach to fabricate under the Silicon on Insulator (SOI) platform a 1x2 power splitter and scale it to 1xN system device from the proposed model. The current strategy of design is based on the well-known…
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain…
The integration of miniaturized optical spectrometers into mobile platforms will have an unprecedented impact on applications ranging from unmanned aerial vehicles (UAVs) to mobile phones. To address this demand, silicon photonics stands…
We investigate a topological switch between second-order topological insulators (SOTIs) and topological crystalline insulators (TCIs). Both the SOTI and the TCI are protected by the mirror and inversion symmetries, for which we define the…
We demonstrate advanced integrated photonic filters in silicon-on-insulator (SOI) nanowires implemented by cascaded Sagnac loop reflector (CSLR) resonators. We investigate mode splitting in these standing-wave (SW) resonators and…
Implementing spin functionalities in Si, and understanding the fundamental processes of spin injection and detection, are the main challenges in spintronics. Here we demonstrate large spin polarizations at room temperature, 34% in n-type…
The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The…
Vertical diamond Schottky diodes with blocking voltages $V_{\text{BD}} > 2.4 \text{ kV}$ and on-resistances $R_{\text{On}} < 400 \text{ m}\Omega \text{cm}^{2}$ were fabricated on homoepitaxially grown diamond layers with different surface…