We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation in transistors using a test-element-group (TEG) up to 2 MGy and in integration-type sensors up to 100 kGy. In this article, successful TID compensation in a pixel-ASD-readout-circuit is shown up to 100 kGy for the application of DSOI to counting-type sensors. The cross-talk suppression in DSOI is being evaluated. These results encourage us that DSOI sensors are applicable to future high-energy experiments such as the BELLE-II experiment or the ILC experiment.
Cite
@article{arxiv.1507.07035,
title = {TID-Effect Compensation and Sensor-Circuit Cross-Talk Suppression in Double-SOI Devices},
author = {Shunsuke Honda and Kazuhiko Hara and Daisuke Sekigawa and Bipin Subedi and Mari Asano and Naoshi Tobita and Wataru Aoyagi and Yasuo Arai and Akimasa Ishikawa and Yoshimasa Ono and Itaru Ushiki and SOI Collaboration},
journal= {arXiv preprint arXiv:1507.07035},
year = {2015}
}
Comments
Proceedings of International Workshop on SOI Pixel Detector (SOIPIX2015), Tohoku University, Sendai, Japan, 3-6, June, 2015. C15-06-03