Related papers: Spin Hall effect transistor
Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…
A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing…
We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar…
Altermagnets hold great potential for spintronic applications, yet their intrinsic spin dynamics and associated transport properties remain largely unexplored. Here, we investigate spin-resolved quantum transport in a multi-terminal setup…
Fundamental physical properties limiting the performance of spin field effect transistors are compared to those of ordinary (charge-based) field effect transistors. Instead of raising and lowering a barrier to current flow these spin…
When a charge current is injected into an altermagnet along a suitable crystallographic direction, a transverse spin current can be generated. This so-called spin-splitter effect does not rely on spin-orbit coupling, and is thus distinct…
Spin transistors based on a semiconducting channel attached to ferromagnetic electrodes suffer from fast spin decay and extremely low spin injection/detection efficiencies. Here, we propose an alternative all-in-one spin device whose…
We consider a two-channel spin transistor with weak spin-orbit induced interband coupling. We show that the coherent transfer of carriers between the coupled channels gives rise to an \textit{additional} spin rotation. We calculate the…
An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access…
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin…
We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of…
An oscillographic study of the Hall voltage with an unpolarized alternating current through a platinum sample revealed choral features of the Hall effect, which clearly demonstrate the presence of the spin Hall effect in metals with a…
Hybrid superconductor-semiconductor heterostructures are promising platforms for realizing topological superconductors and exploring Majorana bound states physics. Motivated by recent experimental progress, we theoretically study how…
Planar CdBxF2-x - p-CdF2 - CdBxF2-x sandwich nanostructures prepared on the surface of the n-type CdF2 bulk crystal are studied to register the spin transistor and quantum spin Hall effects. The current-voltage characteristics of the…
The continuous need for miniaturization and increase in device speed exerts pressureon the electronics industry to explore new avenues of information processing. One possibility is to use the spin to store, manipulate and carry information.…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space…
We propose a spintronic device to generate spin polarization in a mesoscopic region by purely electric means. We show that the spin Hall effect in combination with the stirring effect are sufficient to induce measurable spin polarization in…
We analyze the spin expectation values for injected spin-polarized electrons (spin vectors) in a [001]-grown Rashba-Dresselhaus two-dimensional electron gas (2DEG). We generalize the calculation for point spin injection in semi-infinite…