Related papers: Spin Hall effect transistor
Motivated by the successful idea of using weakly-coupled quantum electronic wires to realize the quantum Hall effects and the quantum spin Hall effects, we theoretically construct two systems composed of weakly-coupled quantum spin chains,…
Spin-Hall nano-oscillators (SHNOs) are promising spintronic devices to realize current controlled GHz frequency signals in nanoscale devices for neuromorphic computing and creating Ising systems. However, traditional SHNOs -- devices based…
Spin-based metal-oxide-semiconductor field-effect transistors (MOSFET) with a high-mobility III-V channel are studied using self-consistent quantum corrected ensemble Monte Carlo device simulations of charge and spin transport. The…
By studying the time and spatial evolution of a pulse of the spin polarization in $n$-type semiconductor quantum wells, we highlight the importance of the off-diagonal spin coherence in spin diffusion and transport. Spin oscillations and…
We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra…
We propose an approach based on a generalized quantum mechanics to deal with the basic features of the intrinsic spin Hall effect. This can be done by considering two decoupled harmonic oscillators on the noncommutative plane and evaluating…
The spin Hall (SH) effect, the conversion of the electric current to the spin current along the transverse direction, relies on the relativistic spin-orbit coupling (SOC). Here, we develop a microscopic theory on the mechanisms of the SH…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
We study the time-development processes of spin and charge transport phenomena in a topological Dirac semimetal attached to a ferromagnetic insulator with a precessing magnetization. Compared to conventional normal metals, topological Dirac…
We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena,…
Using one of the methods of quantum nonequilibrium statistical physics we have investigated the spin transport transverse to the normal metal/ferromagnetic insulator interface in hybrid nanostructures. An approximation of the effective…
Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W)…
We propose a spin field-effect transistor based on spin-orbit (s-o) coupling of both the Rashba and the Dresselhaus types. Differently from earlier proposals, spin transport through our device is tolerant against spin-independent scattering…
Recent advances in the physics of current-driven antiferromagnetic skyrmions have observed the absence of a Magnus force. We outline the symmetry reasons for this phenomenon, and show that this cancellation will fail in the case of spin…
We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…
A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…
We demonstrate theoretically that a coherent manipulation of electron spins in low-dimensional semiconductor structures with spin-orbit coupling by infrared radiation is possible. The proposed approach is based on using a dipole force…
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize room-temperature spintronic applications, beyond the usual magnetoresistive effects. Through carrier recombination, the angular momentum of…