We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anti-crossing. Detailed spectroscopy at the anti-crossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multi-photon spin resonances. Our experimental observations agree with theoretical calculations.
@article{arxiv.1707.03106,
title = {Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor},
author = {Keiji Ono and G. Giavaras and Tetsufumi Tanamoto and T. Ohguro and Xuedong Hu and Franco Nori},
journal= {arXiv preprint arXiv:1707.03106},
year = {2017}
}
Comments
5 pages and 3 figures for the main text, 6 pages and 5 figures for the appendices