Hall-like effect induced by spin-orbit interaction
Mesoscale and Nanoscale Physics
2009-10-31 v1
Abstract
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave of a proper polarization induces voltage drop perpendicularly to the direct current flow between source and drain of the considered four-terminal cross-structure. The resulting Hall-like resistance is estimated to be of the order of 10^-3 - 10^-2 h/e^2 for technologically available structures. The effect becomes more pronounced in the vicinity of resonances where Hall-like resistance changes its sign as function of the Fermi energy.
Cite
@article{arxiv.cond-mat/9906151,
title = {Hall-like effect induced by spin-orbit interaction},
author = {E. N. Bulgakov and K. N. Pichugin and A. F. Sadreev and P. Středa and P. Šeba},
journal= {arXiv preprint arXiv:cond-mat/9906151},
year = {2009}
}
Comments
4 pages (RevTeX), 4 figures, will appear in Phys. Rev. Lett