Related papers: Spin Hall effect transistor
Electronic properties like current flow are generally independent of the electron's spin angular momentum, an internal degree of freedom present in quantum particles. The spin Hall effects (SHEs), first proposed 40 years ago, are an unusual…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a…
We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schr\"odinger problem for…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
We investigate theoretically the efficiency of the Rashba effect, i.e. the spin splitting resulting from an electric field. This is the mechanism behind the Datta-Das spin transistor. In the research efforts so far the carriers have usually…
We predict the very large spin Hall effect in type-II superconductors which mechanism is drastically different from the previously known ones. We find that in the flux-flow regime the spin is transported by the spin-polarized Abrikosov…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…
Nonreciprocal dissipationless transport has long been sought for applications in superconducting technologies. Recently, it has been implemented by the so called superconducting diode effect. Such effect arises from an imbalance in critical…
A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be…
We predict that unpolarized charge current driven through the longitudinal leads attached to ballistic quantum-coherent two-dimensional electron gas (2DEG) in semiconductor heterostructure will induce a {\em pure} spin current, which is not…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and…
Ever since its discovery, the electron spin has only been measured or manipulated through the application of an electromagnetic force acting on the associated magnetic moment. In this work, we propose a spin Aharonov-Bohm effect in which…
We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…