Related papers: Spin Hall effect transistor
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
We describe an intrinsic spin-Hall effect in $n$-type bulk zinc-blende semiconductors with topological origin. When electron transport is confined to a waveguide structure, and the applied electric field is such that the spins of electrons…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical…
Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the…
Spin Hall effect (SHE), a fundamental transport phenomenon with non-zero spin current but vanishing charge current, has important applications in spintronics for the electrical control of spins. Owing to the half-spin nature of electrons,…
In this review, we describe in detail two important spin-transport phenomena: the extrinsic spin-Hall effect (coming from spin-orbit interactions between electrons and impurities) and the spin-Coulomb drag. The interplay of these two…
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including…
We propose and numerically simulate novel reconfigurable logic gates employing spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs). The output characteristics of the spin MOSFETs depend on the relative magnetization…
It has recently been proposed and experimentally demonstrated that it is possible to generate large thermoelectric effects in ferromagnet/superconductor structures due to a spin-dependent particle-hole asymmetry. Here, we theoretically show…
With recent advances in simulating quantum phenomena in cold atoms, the higher-rank spin tensor Hall effect was discovered in larger spin systems with spin-tensor-momentum coupling, which is an extension of the celebrated spin Hall effects…
Spin Hall effects interconvert spin- and charge currents due to spin-orbit interaction, which enables convenient electrical generation and detection of diffusive spin currents and even collective spin excitations in magnetic solids. Here,…
We generalize the spin Hall angle to laser pulses of finite frequencies in the linear response regime and predict a giant optical spin Hall effect. Namely, for certain transition metal elements, at particular frequencies, the spin current…
Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Although first observed only a decade ago, these effects are already…
We propose two schemes of a novel spin-optronic device, optical analog of Datta and Das spin transistor for the electrons. The role of ferromagnetic contacts is played by one-dimensional polariton channels with strong TE-TM splitting. A…
Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the…
We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V…
Intrinsic contribution to the spin Hall effect in a two-dimensional silicene is considered theoretically within the linear response theory and Green function formalism. When an external voltage normal to the silicene plane is applied, the…
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been…
The zero-temperature magnetic field-dependent conductance of electrons through a one-dimensional non-interacting tight-binding chain with an interacting {\it side} dot is reviewed and analized further. When the number of electrons in the…