We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductance controlled by the magnetization configurations of the MTJ at room temperature. This is the first observation of spin-transistor operations for spin-functional MOSFETs.
@article{arxiv.0912.0835,
title = {A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET},
author = {Yusuke Shuto and Ryosho Nakane and Wenhong Wang and Hiroaki Sukegawa and Shuu'ichirou Yamamoto and Masaaki Tanaka and Koichiro Inomata and Satoshi Sugahara},
journal= {arXiv preprint arXiv:0912.0835},
year = {2009}
}