Recently spin-transistors receive considerable attention as a highly-functional building block of future integrated circuits. In order to realize spin-transistors, it is essential that technology of efficient spin injection/detection for semiconductor channel is established. However, this is not so easy challenge owing to ferromagnet/semiconductor-interface-related several problems. In this paper, we demonstrate pseudo-spin-MOSFET (PS-MOSFET) architecture that is a new circuit approach using an ordinary MOSFET and magnetic tunnel junction (MTJ) to reproduce the functions of spin transistors.
@article{arxiv.0910.5238,
title = {Fabrication and characterization of pseudo-spin-MOSFET},
author = {Y. Shuto and R. Nakane and H. Sukegawa and S. Yamamoto and M. Tanaka and K. Inomata and S. Sugahara},
journal= {arXiv preprint arXiv:0910.5238},
year = {2009}
}
Comments
Presented at Intl. Conf. on Silicon Nano Devices in 2030, Tokyo, October 13-14, 2009, pp. 148-149