Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques
Materials Science
2019-12-30 v1 Mesoscale and Nanoscale Physics
Applied Physics
Abstract
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to a SOTFET heterostructure.
Cite
@article{arxiv.1912.11715,
title = {Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques},
author = {Phillip Dang and Zexuan Zhang and Joseph Casamento and Xiang Li and Jashan Singhal and Darrell G. Schlom and Daniel C. Ralph and Huili Grace Xing and Debdeep Jena},
journal= {arXiv preprint arXiv:1912.11715},
year = {2019}
}