Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves passing a high current across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular Co90Fe10 (CoFe) free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru spacer. The preferred magnetic state of the free layer is determined by the current polarity and the nature of the interlayer exchange coupling (IEC). Our strategy offers a scalable solution to realize bias-field-free SOT switching that can lead to a generation of SOT-based devices, that combine high storage density and endurance with potentially low power consumption.
@article{arxiv.1511.05773,
title = {Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer},
author = {Yong-Chang Lau and Davide Betto and Karsten Rode and JMD Coey and Plamen Stamenov},
journal= {arXiv preprint arXiv:1511.05773},
year = {2015}
}
Comments
6 pages,3 figures, first submitted on 31st July 2015