Related papers: Investigation of Sb diffusion in amorphous silicon

We report absorption and photoluminescence spectra of Si and SnO$_2$ polycrystalline nanofilms in the UV-Vis-NIR range, featuring discrete bands resulting from transverse quantum confinement. The film thickness ranged 3.9 nm to 12.2 nm,…

We deposited Nb3Sn film on the inner surface of a 2.6 GHz Nb superconducting radiofrequency (SRF) cavity by co-sputtering using a composite of Nb and Sn tube targets in a DC cylindrical magnetron sputtering system, followed by thermal…

Near surface silver nanoparticles embedded in silicon oxide were obtained by 40 keV silver negative ion implantation without the requirement of an annealing step. Ion beam induced local heating within the film leads to an exo-diffusion of…

Material absorption is a key limitation in nanophotonic systems; however, its characterization is often obscured by scattering and diffraction loss. Here we show that nanomechanical frequency spectroscopy can be used to characterize the…

Employing density functional theory calculations we explore initial stage of competitive alloying of co-deposited silver and indium atoms into a silicon surface. Particularly, we identify respective adsorption positions and activation…

The nanoinstability of single crystal Si nanowire under focused electron beam irradiation was in-situ investigated at room temperature by transmission electron microscopy technique. It was observed that the Si nanowire amorphized…

Thermally stimulated diffusion of Mn across the (Ga,Mn)As/GaAs interface has been studied by X-ray photoemission. Ga(0.95)Mn(0.05)As layers were capped with GaAs of different thickness 4, 6 and 8ML, and Mn diffusing through the GaAs layers…

In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunnelling microscopy (STM) and molecular beam epitaxy it is necessary to minimize the segregation/diffusion of dopant atoms during silicon…

A multiscale studying integrating ab initio quantum mechanics, classical molecular dynamics and two-temperature model, is carried out to study film thickness dependent femtosecond laser spallation and ablation. As an interval of 130.73 nm,…

Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in…

The angular distribution function of multiple scattering experienced by 855 MeV electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations…

We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with…

Thick metallic silver films have been deposited onto Si(111)-(7x7) substrates at room temperature. Their electronic properties have been studied by using angle resolved photoelectron spectroscopy (ARPES). In addition to the electronic band…

Highly confined "spoof" surface plasmon-like (SSP) modes are theoretically predicted to exist in a perforated metal film coated with a thin dielectric layer. Strong modes confinement results from the additional waveguiding by the layer.…

Amorphous hydrogenated silicon (a-Si:H) is an important material for surface defect passivation of photovoltaic silicon (Si) wafers in order to reduce their recombination losses. The material is however unstable with regards to hydrogen (H)…

Amorphization of silicon is crucial to applications in photonics, microelectronics and solar cell technologies. Ultrafast lasers have been used to generate amorphous silicon from crystalline silicon using rapid nonthermal melting and…

A novel approach to predict the atomic densities of amorphous materials is explored on the basis of Car-Parrinello molecular dynamics (CPMD) in density functional theory. Despite that determination of the atomic density of matter is crucial…

We have investigated Rb adsorption on the Si(100) surface for 0.5 and 1 monolayer coverages using the total energy method with norm-conserving pseudopotentials. For 2$\times$1 reconstruction at 1 ML coverage symmetrized dimers are found to…

The magnetic structure of the in-plane skyrmions in epitaxial MnSi/Si(111) thin films is probed in three dimensions by the combination of polarized neutron reflectometry (PNR) and small angle neutron scattering (SANS). We demonstrate that…

The amorphous-to-crystalline transition in Al(1.0%wtSi)/Zr and Al(Pure)/Zr multilayers grown by direct-current magnetron sputtering system has been characterized over a range of Al layer thicknesses (1.0-5.0 nm) by using a series of…