Related papers: Investigation of Sb diffusion in amorphous silicon
The electronic properties of superconducting Sn films ($T_c \approx$ 3.8 K) change significantly when reducing the film thickness down to a few nm, in particular close to the percolation threshold. The low-energy electrodynamics of such Sn…
Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide…
Hydrogenated amorphous silicon (a-Si:H) has garnered considerable attention in the semiconductor industry, particularly for its use in solar cells and passivation layers for high performance silicon solar cells, owing to its exceptional…
We report on experimental evidence for the formation of a two dimensional Si/Au(110) surface alloy. In this study, we have used a combination of scanning tunneling microscopy, low energy electron diffraction, Auger electron spectroscopy and…
Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions…
This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon ($a$-Si) from lattice-dynamical calculations and direct molecular-dynamics simulations using density-functional theory…
We report on Boron diffusion and subsequent crystallization of Co$_{40}$Fe$_{40}$B$_{20}$ (CoFeB) thin films on SiO$_2$/Si(001) substrate using pulsed laser deposition. Secondary ion mass spectroscopy reveals Boron diffusion at the…
We report record high Si-29 spin polarization obtained using dynamic nuclear polarization in microcrystalline silicon powder. Unpaired electrons in this silicon powder are due to dangling bonds in the amorphous region of this intrinsically…
The high-pressure behavior of silicon telluride (Si2Te3), a two-dimensional (2D) layered material, was investigated using synchrotron X-ray powder diffraction in a diamond anvil cell to 11.5 GPa coupled with first-principles theory. Si2Te3…
We have extended our experimentally constrained molecular relaxation technique (P. Biswas {\it et al}, Phys. Rev. B {\bf 71} 54204 (2005)) to hydrogenated amorphous silicon: a 540-atom model with 7.4 % hydrogen and a 611-atom model with 22…
Investigation of crystallization in an 5BDSR amorphous alloy by system Fe-Cu-Nb-Si-B under the influence of an incoherent optical radiation generated by gas discharge flash-lamp using X-ray diffraction scattering. It is shown that depending…
We have investigated the dynamics of Na ions in amorphous Na2Si2O5, a potential solid electrolyte material for Na-battery. We have employed quasielastic neutron scattering (QENS) technique in the amorphous Na2Si2O5 from 300 to 748 K to…
We deposit intrinsic hydrogenated amorphous silicon (a-Si:H) thin films by reactive pulsed laser deposition, for various hydrogen pressures in the 0-20 Pa range, at a low deposition temperature of 120C, and investigate the hydrogen…
Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InO$_x$, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer…
Metalenses built up by artificial sub-wavelength nanostructures have shown the capability of realizing light focusing with miniature lens size. To date, most of the reported metalenses were patterned using electron beam lithography (EBL),…
Microwave energy can be advantageously used for materials processing as it provides high heating rates and homogeneous temperature field distribution. These features are partly due to the large microwave penetration depth into dielectric…
Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room…
Polycrystalline Bi-Sb alloys have been synthesized over a wide range of antimony concentration (8 at% to 20 at%) by solid state reaction method. In depth structural analysis using X-Ray diffraction (XRD) and temperature dependent…
A set of Mo/Si periodic multilayers is studied by non destructive analysis methods. The thickness of the Si layers is 5 nm while the thickness of the Mo layers changes from one multilayer to another, from 2 to 4 nm. This enables us to probe…
By means of ab-initio calculations we investigate the optical properties of pure a-SiN$_x$ samples, with $x \in [0.4, 1.8]$, and samples embedding silicon nanoclusters (NCs) of diameter $0.5 \leq d \leq 1.0$ nm. In the pure samples the…