Related papers: Investigation of Sb diffusion in amorphous silicon

Maximization saturation magnetic induction (Bs) of soft magnetic alloys is essential for the high power-density electromagnetic devices. However, identifying the alloy compositions with high Bs often replies on the lab-intensive melt…

In the search for alternative plasmonic materials SrMoO3 has recently been identified as possessing a number of desirable optical properties. Owing to the requirement for many plasmonic devices to operate at elevated temperatures however,…

Thin Ba0.5Sr0.5TiO3 (BST) films on p-type Si (100) using The Chemical Solution Deposition (CSD) method. X-ray diffraction (XRD), Scanning electron microscopy (SEM), C-V meter analysis measurement were employed to characterise the films. The…

Non-volatile phase-change materials with large optical contrast are essential for future tunable nanophotonics. Antimony trisulfide (Sb2S3) has recently gained popularity in this field due to its low absorption in the visible spectral…

Crystalline wurtzite zinc oxide (w-ZnO) can be used as a wide band gap semiconductor for light emitting devices and for transparent or high temperature electronics. The use of amorphous zinc oxide (a-ZnO) can be an advantage in these…

Silicon (Si) nanoparticles (NPs) were synthesized by transforming Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)2SiF6 under acid vapor treatment. Si-NPs are embedded within the polycrystalline (ASH) layer formed on the Si…

Sequential infiltration synthesis (SIS) provides a successful route to grow inorganic materials into polymeric films by penetrating of gaseous precursors into the polymer, both in order to enhance the functional properties of the polymer…

Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The…

The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical…

Co-sputtered Au-Ni thin films having thickness of 30 nm were deposited on Si(100) substrates and irradiated with 160 keV ^{40}Ar^{+} under ambient condition at a number of fluences and analyzed using Rutherford backscattering spectrometry…

Bulk samples of $(Sn_{1-x}Sb_{x}O_{2-\delta})$ with x = 0.00, 0.10, 0.20, 0.30 are synthesized by solid-state reaction route. Samples were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), transmission…

Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The…

The synthesis of embedded silicon carbide was carried out in N type silicon samples having (100) and (111) orientations using high dose implantation of carbon ions at room temperature. The variation of dose was employed to get dose…

B and N K-edge x-ray absorption spectroscopy measurements have been performed on three BN thin films grown on Si substrates using ion-assisted pulsed laser deposition. Comparison of the films' spectra to those of several single-phase BN…

The mechanical vulnerability of the Nb3Sn-coated cavities is identified as one of the significant technical hurdles toward deploying them in practical accelerator applications in the not-so-distant future. It is crucial to characterize the…

We report a new approach to simulate amorphous networks of covalently bonded materials that leads to excellent radial distribution functions and realistic atomic arrangements. We apply it to generate the first ab initio structures of…

Control over the properties of nanoparticles obtained by laser ablation in liquids is experimentally demonstrated via modulation of the beam intensity profile on the target. Mask projection scheme was used with either a copper laser…

Thin amorphous-CoFeB (a-CFB) is deposited by rf-magnetron sputtering on a self-oxidized Si (100) substrate with different film thicknesses ranging from 0.7 nm to 20 nm. The 5-nm-thick a-CFB film is capped with a W layer for comparison. The…

Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana fermions in solid state, a fundamental research…

Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were…