Related papers: Investigation of Sb diffusion in amorphous silicon

Terbium doped silicon oxynitride host matrix is suitable for various applications such as light emitters compatible with CMOS technology or frequency converter systems for photovoltaic cells. In this study, amorphous Tb3+ ion doped…

Surface sensitive x-ray scattering techniques with atomic scale resolution are employed to investigate the microscopic structure of the surface of three classes of liquid binary alloys: (i) Surface segregation in partly miscible binary…

A comprehensive model of high-concentration phosphorus diffusion has been developed and simulation of phosphorus diffusion from a constant source (phosphosilicate glass) at a temperature of 890 Celsius degrees for 14.25 min. has been…

Nb3Sn and V3Si thin films are promising candidates as thin films for the next generation of superconducting radio-frequency (SRF) cavities. However, sputtered films often suffer from stoichiometry and strain issues during deposition and…

Chalcogenide-based optical phase change materials (OPCMs) exhibit a large contrast in refractive index when reversibly switched between their stable amorphous and crystalline states. OPCMs have rapidly gained attention due to their…

We present a novel approach for parameter-free modeling of the structural, dynamical and electronic properties of non-crystalline materials based on ab-initio Molecular Dynamics, improved signal processing technique and computer…

In order to get homogeneous nanostructured Aluminum Nitride deposits, thin films were grown at room temperature on [001] Si substrates by radio frequency magnetron reactive sputtering. The deposits were analysed by Transmission Electron…

Hf silicate films (HfO_2)_{0.25}(SiO_2)_{0.75} with thicknesses in the range 4-20 nm were grown on silicon substrate by atomic layer deposition at 350 deg.C.The Hf distributions in as-grown and 800 deg.C annealed films were investigated by…

MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C.…

Thin films of molybendum disulfide grown via thermal atomic layer deposition at low temperatures, suitable for temperature sensible substrates, can be amorphous. To avoid a high temperature post treatment of the whole sample, which can…

Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared…

Laser Light Scattering (LLS) method, combined with a long-distance microscope was utilized to detect micrometer-sized particles on a smooth substrate. LLS was capable to detect individual particle release, shrink, or fragmentation during…

The characteristics of a hydrogenated amorphous silicon (a-Si:H) detector are presented here for monitoring in space solar flares and the evolution of large energetic proton events up to hundreds of MeV. The a-Si:H presents an excellent…

A two stream model of boron diffusion in silicon has been developed. The model is intended for simulation of transient enhanced diffusion including redistribution of ion-implanted boron during low temperature annealing. The following…

The annealing kinetics of the high energy ion damage in amorphous silicon dioxide (a-SiO2) are still not well understood, despite the material's widespread application in material science, physics, geology, and biology. This study…

Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating…

When the sulfur element is hyperdoped into crystalline silicon to a supersaturated density of 1020 cm-3, it can enhance the sub-bandgap light absorption of silicon from 0 to 70%, with the antireflection of surface dome structures. On the…

The effect of temperature modes and heating rates (Vh) on the shrinkage kinetics of submicron and fine aluminum oxide powders has been studied. The objects of research comprised (i) submicron alfa-Al2O3 powder, (ii) submicron alfa-Al2O3…

Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties…

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…