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We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 V. C. Chan , T. M. Buehler , A. J. Ferguson , D. R. McCamey , D. J. Reilly , A. S. Dzurak , R. G. Clark , C. Yang , D. N. Jamieson

We have demonstrated a novel type of superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon (MET) potentially offers a smaller footprint and…

The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures $T$ as small as…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 A. N. Korotkov

We investigate the properties of a hybrid single electron transistor, involving a small superconducting island sandwiched between normal metal leads, which is driven by dc plus ac voltages. In order to describe its properties we derive from…

We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to…

Quantum Physics · Physics 2021-10-27 N. R. Beysengulov , J. R. Lane , J. M. Kitzman , K. Nasyedkin , D. G. Rees , J. Pollanen

Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 R. Dolata , H. Scherer , A. B. Zorin , J. Niemeyer

The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Michio Watanabe

We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…

Strongly Correlated Electrons · Physics 2012-08-27 J. H. Miller, , G. Cardenas , A. Garcia , W. More , A. W. Beckwith , J. P. McCarten

The current noise spectrum of a single-electron transistor (SET) coupled to a nano-mechanical resonator is calculated in the classical regime. Correlations between the charge on the SET island and the position of the resonator give rise to…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 A. D. Armour

We have analyzed numerically the response and noise-limited charge sensitivity of a radio-frequency single-electron transistor (RF-SET) in a non-superconducting state using the orthodox theory. In particular, we have studied the performance…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Valentin O. Turin , Alexander N. Korotkov

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…

Materials Science · Physics 2009-11-10 R. Zeis , Ch. Kloc , K. Takimiya , Y. Kunugi , Y. Konda , N. Niihara , T. Otsubo

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Materials Science · Physics 2009-11-10 V. Podzorov , M. E. Gershenson , Ch. Kloc , R. Zeis , E. Bucher

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena due to their charge stability and robust…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 S. J. MacLeod , A. M. See , Z. K. Keane , P. Scriven , A. P. Micolich , M. Aagesen , P. E. Lindelof , A. R. Hamilton

We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The…

We discuss the operation of the superconductor - insulator - normal-metal - insulator - superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Antti Kemppinen , Matthias Meschke , Mikko Möttönen , Dmitri V. Averin , Jukka P. Pekola

We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on…

Mesoscale and Nanoscale Physics · Physics 2012-08-15 J. O. Island , V. Tayari , S. Yigen , A. C. McRae , A. R. Champagne

We present a method for measuring single spins embedded in a solid by probing two electron systems with a single electron transistor (SET). Restrictions imposed by the Pauli Principle on allowed two electron states mean that the spin state…

Condensed Matter · Physics 2009-10-31 B. E. Kane , N. S. McAlpine , A. S. Dzurak , R. G. Clark , G. J. Milburn , He Bi Sun , Howard Wiseman

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 V. A. Krupenin , D. E. Presnov , M. N. Savvateev , H. Scherer , A. B. Zorin , J. Niemeyer

We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a…

Superconductivity · Physics 2015-05-20 Sergey V Lotkhov , Olli-Pentti Saira , Jukka P Pekola , Alexander B Zorin

A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…

Mesoscale and Nanoscale Physics · Physics 2009-10-31 C. P. Heij , P. Hadley , J. E. Mooij