Noise in Al single electron transistors of stacked design

V. A. Krupenin; D. E. Presnov; M. N. Savvateev; H. Scherer; A. B. Zorin; J. Niemeyer

doi:10.1063/1.368474

Noise in Al single electron transistors of stacked design

Mesoscale and Nanoscale Physics 2009-10-31 v1

Authors: V. A. Krupenin , D. E. Presnov , M. N. Savvateev , H. Scherer , A. B. Zorin , J. Niemeyer

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Abstract

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of all transistors turned out to be surprisingly low, (2.5 - 7)*10E-5 e/sqrt(Hz) at f = 10 Hz. Although the lowest detected noise originates mostly from fluctuations of background charge, the noise contribution of the tunnel junction conductances was, on occasion, found to be dominant.

Keywords

single electron transistors aluminum charge noise tunnel junctions background charge stacked design

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@article{arxiv.cond-mat/9804197,
  title  = {Noise in Al single electron transistors of stacked design},
  author = {V. A. Krupenin and D. E. Presnov and M. N. Savvateev and H. Scherer and A. B. Zorin and J. Niemeyer},
  journal= {arXiv preprint arXiv:cond-mat/9804197},
  year   = {2009}
}

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4 pages of text with 1 table and 5 figures

Noise in Al single electron transistors of stacked design

Abstract

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