Related papers: Valley interference effects on a donor electron cl…
In transition-metal dichalcogenides, electrons in the K-valleys can experience both Ising and Rashba spin-orbit couplings. In this work, we show that the coexistence of Ising and Rashba spin-orbit couplings leads to a special type of valley…
Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum…
We present a theory of interacting valence holes in a gate-defined one-dimensional quantum channel in a single layer of a transition metal dichalcogenide material WSe$_2$. Based on a microscopic atomistic tight-binding model and…
We report here a systematic study of the energy gaps at the odd-integer quantum Hall states $\nu=3$ and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley…
The electron-photon interaction in 2D materials obeys the rule of electron valley-photon polarization correspondence. At the quantum level, such correspondence can be utilized to entangle valleys and polarizations and attain the transfer of…
The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and…
Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…
The exchange interaction $J$ offers a powerful tool for quantum computation based on semiconductor spin qubits. However, the exchange interaction in two-electron systems in the absence of a magnetic field is usually constrained to be…
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a…
Intervalley mixing between conduction-band states in low-dimensional Si/SiGe heterostructures induces splitting between nominally degenerate energy levels. The symmetric double-valley effective mass approximation and the empirical…
Electrons in 2-dimensional crystals with a honeycomb lattice structure possess a new valley degree of freedom (DOF) in addition to charge and spin. Each valley is predicted to exhibit a Hall effect in the absence of a magnetic field whose…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
Exchange interaction strongly influences the long-range behavior of localized electron orbitals and quantum tunneling amplitudes.In the Hartree-Fock approximation the exchange produces a power-law decay instead of the usual exponential…
Silicon metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator (SOI) substrate, that is annealed at high temperature for a long time are known to exhibit…
Quantum tunneling is the phenomenon that makes superconducting circuits "quantum". Recently, there has been a renewed interest in using quantum tunneling in phase space of a Kerr parametric oscillator as a resource for quantum information…
We theoretically study spin and valley transport in a transition-metal dichalcogenide(TMDC)/ferromagnet heterostructure under a perpendicular magnetic field. We find that microwave-driven spin pumping induces a valley-selective spin…
We use a quantum trajectory-based semi-classical method to account for Coulomb interaction between the photoelectron and the parent ion in the classically forbidden, sub-barrier region during strong-field tunneling ionization processes. We…
Electron shuttling is emerging as a key enabler of scalable silicon spin-qubit quantum computing, but fidelities are limited by atomistic disorder. We introduce a multiscale simulation framework combining time-dependent finite-element…
We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect…
The electronic structure of two vertically coupled quantum dots containing two electrons is investigated in the presence of interdot tunneling. Our approach also includes the interdot exchange and we find that the tunneling is affected by…