Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Benoit Roche; Eva Dupont-Ferrier; Benoit Voisin; Manuel Cobian; Xavier Jehl; Romain Wacquez; Maud Vinet; Yann-Michel Niquet; Marc Sanquer

doi:10.1103/PhysRevLett.108.206812

Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Mesoscale and Nanoscale Physics 2012-07-13 v1

Authors: Benoit Roche , Eva Dupont-Ferrier , Benoit Voisin , Manuel Cobian , Xavier Jehl , Romain Wacquez , Maud Vinet , Yann-Michel Niquet , Marc Sanquer

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Abstract

We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant transport spectroscopy which eliminates artifacts induced by the environment. Quantitative simulations taking into account the position of the donors with respect to the Si/SiO $_2$ interface and electric field in the wire show that the values found are consistent with the device geometry.

Keywords

valley-orbit splitting silicon nanowire phosphorus donors transport spectroscopy Si/SiO2 interface

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@article{arxiv.1207.2901,
  title  = {Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy},
  author = {Benoit Roche and Eva Dupont-Ferrier and Benoit Voisin and Manuel Cobian and Xavier Jehl and Romain Wacquez and Maud Vinet and Yann-Michel Niquet and Marc Sanquer},
  journal= {arXiv preprint arXiv:1207.2901},
  year   = {2012}
}

Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy

Abstract

Keywords

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