Silicon metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator (SOI) substrate, that is annealed at high temperature for a long time are known to exhibit large valley splitting, but the origin of this splitting has long been unknown. Extended zone effective-mass approximation (EMA) predicts that strain significantly affects valley splitting. In this study, we analyzed valley splitting based on this theory and found that the shear strain along <110> of approximately 5% near the buried oxide (BOX) interface is a promising source for large valley splitting.
@article{arxiv.2309.05219,
title = {Valley splitting by extended zone effective mass approximation incorporating strain in silicon},
author = {Jinichiro Noborisaka and Toshiaki Hayashi and Akira Fujiwara and Katsuhiko Nishiguchi},
journal= {arXiv preprint arXiv:2309.05219},
year = {2024}
}