Related papers: Valley interference effects on a donor electron cl…
The Valley Hall effect provides a popular route to engineer robust waveguides for bosonic excitations such a photons and phonons. The almost complete absence of backscattering in many experiments has its theoretical underpinning in a…
In quantum Hall systems with two narrow constrictions, tunneling between opposite edges can give rise to quantum interference and Aharonov-Bohm-like oscillations of the conductance. When there is an integer quantized Hall state within the…
We examine energy spectra of Si quantum dots embedded into Si_{0.75}Ge_{0.25} buffers using atomistic numerical calculations for dimensions relevant to qubit implementations. The valley degeneracy of the lowest orbital state is lifted and…
We study single and double quantum dots defined electrostatically within silicene. The spin-valley structure of the confined single- and two-electron system is determined and the effects of the intervalley scattering induced by the crystal…
We present the theory and measurement of valley splitting in a quantum point contact (QPC) in a modulation doped Si/SiGe heterostructure. Our measurements are performed on a submicron Schottky-gated device. An effective mass theory is…
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a…
We develop a theory of inter-valley Coulomb scattering in semiconducting carbon-nanotube quantum dots, taking into account the effects of curvature and chirality. Starting from the effective-mass description of single-particle states, we…
We examine a Kerr phase gate in a semiconductor quantum well structure based on the tunnelling interference effect. We show that there exist a specific signal field detuning, at which the absorption/amplification of the probe field will be…
Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study…
Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and…
The valley degeneracy in Si qubit devices presents problems for their use in quantum information processing. It is possible to lift this degeneracy by using the Wiggle Well architecture, in which an oscillatory Ge concentration couples the…
We investigate interference effects of the backscattering current through a double-barrier structure in an interacting quantum wire attached to noninteracting leads. Depending on the interaction strength and the location of the barriers,…
We investigate direct above-threshold ionization in diatomic molecules, with particular emphasis on how quantum interference is altered by a driving field of non-vanishing ellipticity. This interference may be either temporal, i.e., related…
The valley degree of freedom of electrons in solids has been proposed as a new type of information carriers beyond the electronic charge and spin. Recent experimental demonstrations of the optical orientation of the valley polarization and…
Valley coherence is of great significance for exploring fundamental quantum phenomena and developing next-generation valleytronic devices. Herein, we theoretically investigate the valley quantum interference engineered by inter-Landau level…
Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may…
We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the…
Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for…
Strong correlation effects on electron transport through a spinless quantum dot are considered. When two single-particle levels in the quantum dot are degenerate, a conserved pseudospin degree of freedom appears for general tunneling matrix…
Recent progress in the fabrication of quantum dots using silicon opens the prospect of observing the Kondo effect associated with the valley degree of freedom. We compute the dot density of states using an Anderson model with infinite…