Related papers: Valley interference effects on a donor electron cl…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron…
We systematically study the impact of various electron-acoustic-phonon coupling mechanisms on valley physics in two-dimensional materials. In the static strain limit, we find that Dirac cone tilt and deformation potential have analogous…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
Recent experiments have studied the temperature and gate voltage dependence of nonlocal transport in bilayer graphene, identifying features thought to be associated with the two-dimensional semiconductor's bulk intrinsic valley Hall effect.…
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor…
We investigate how different interface geometries of an Al/Al$_2$O$_3$ junction, a common component of modern tunnel devices, affect electron transport through the tunnel barrier. We study six distinct Al/Al$_2$O$_3$ interfaces which differ…
We investigate the effects of spin-orbit interaction (SOI) and valley mixing on the transport and dynamical properties of a carbon nanotube (CNT) quantum dot in the Kondo regime. As these perturbations break the pseudo-spin symmetry in the…
We analyze an interplay between the proximity effect and quantum interference of electrons in hybrid structures superconductor-normal metal-superconductor which contain several insulating barriers. We demonstrate that the dc Josephson…
In analogy to the Coulomb and the Pauli spin blockade, based on the electrostatic repulsion and the Pauli exclusion principle respectively, the concept of valley blockade in Silicon nanostructures is explored. The valley parity operator is…
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be…
The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…
Tunneling ionization is characterized by a negative time delay, observed asymptotically as a specific shift of the photoelectron momentum distribution, which is caused by the interference of the sub-barrier recolliding and direct ionization…
We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the…
We investigate the effects of spin-orbit interaction (SOI) on the exchange cotunneling through a spinful Coulomb blockaded quantum dot. In the case of zero magnetic field, Kondo effect is shown to take place via a Kramers doublet and the…
Transport and thermodynamic properties of disordered conductors are considerably modified when the angle through which the electron spin precesses due to spin-orbit interaction (SOI) during the mean free time becomes significant. Cooperon…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$,…
The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron…