Related papers: Valley interference effects on a donor electron cl…
The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized…
Dopant-based quantum computing implementations often require the dopants to be situated close to an interface to facilitate qubit manipulation with local gates. Interfaces not only modify the energies of the bound states but also affect…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and…
The charge transport in a dirty 2-dimensional electron system biased in the presence of a lateral potential barrier under magnetic field is theoretically studied. The quantum tunneling across the barrier provides the quantum interference of…
The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin to how electronic and spintronic devices utilize the charge and spin degrees of freedom of electrons respectively. The engineering of valleytronic…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
Multi-valley effective mass theory for silicon quantum well structure is studied taking into account the external fields and the quantum interfaces. It is found that the phenomenological delta function potential, employed to explain the…
Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley splitting is small, of order 100 $\mu$eV in Si/SiGe quantum…
Underpinning the field of "valleytronics" is the coupling of the helicity of circularly polarized light to the valley degree of freedom, and this remains the only known lightform to exhibit this remarkable effect. Here we show that on…
In this paper we study electron interference in nanotube loops. The conductance as a function of the applied voltage is shown to oscillate due to interference between electron beams traversing the loop in two opposite directions, with…
We report on theoretical investigations of scattering asymmetry vs. incidence of carriers through exchange barriers and magnetic tunnel junctions made of semiconductors involving spin-orbit interaction. By an analytical 2?2 spin model, we…
We investigate the role of long-range Coulomb interactions in $M$-valley moir\'es using the self-consistent Hartree-Fock approximation. This platform was recently proposed [Nature 643, 376 (2025) and arXiv:2411.18828 (2024)] as a new class…
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for…
We study theoretically nonlinear valley polarization dynamics of excitons in atom-thin semiconductors. The presence of significant polarization slows down valley relaxation due to an effective magnetic field resulting from exciton-exciton…
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality…
Two infinite, two-dimensional, lattice, free fermion systems, initially in different invariant states, are allowed to communicate via two point contacts, through which direct tunneling of fermions takes place. Calculations of the local…
We study a system composed of graphene decorated with an array of islands with C_3v symmetry that induce quantum dot (IQD) regions via proximity effects and give rise to several spin-orbit couplings (SOCs). We evaluate transport properties…
On the basis of ab-initio total-energy electronic-structure calculations, we find that interface localized electron states at the SiC/SiO$_2$ interface emerge in the energy region between 0.3 eV below and 1.2 eV above the bulk…
We have investigated theoretically the conductance of a Normal-Superconductor point-contact in the tunnel limit and analyzed the quantum interference effects originating from the scattering of quasiparticles by point-like defects.…
We study the subgap transport properties of a small capacitance normal metal-superconductor tunnel junction coupled to an external electromagnetic environment. Mesoscopic interference between the electrons in the normal metal strongly…