Quantum control and manipulation of donor electrons in Si-based quantum computing
Abstract
Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields.
Cite
@article{arxiv.0809.3660,
title = {Quantum control and manipulation of donor electrons in Si-based quantum computing},
author = {M. J. Calderon and A. Saraiva and B. Koiller and S. Das Sarma},
journal= {arXiv preprint arXiv:0809.3660},
year = {2009}
}
Comments
Invited Presentation at the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro - Brazil, Jul 27-Aug 1, 2008. A paragraph added to the conclusions, 4 new references