Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.
@article{arxiv.cond-mat/0602597,
title = {Magnetic field-assisted manipulation and entanglement of Si spin qubits},
author = {M. J. Calderon and Belita Koiller and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/0602597},
year = {2007}
}