Thickness monitoring of graphene on SiC using low-energy electron diffraction

P. J. Fisher; Luxmi; N. Srivastava; S. Nie; R. M. Feenstra

Thickness monitoring of graphene on SiC using low-energy electron diffraction

Materials Science 2010-11-23 v1 Mesoscale and Nanoscale Physics

Authors: P. J. Fisher , Luxmi , N. Srivastava , S. Nie , R. M. Feenstra

Abstract

The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the graphene is examined. The ratio of primary diffraction spot intensities for graphene compared to SiC is measured for a series of samples of known graphene thickness (determined using low-energy electron microscopy). It is found that this ratio is effective for determining graphene thicknesses in the range 1 to 3 monolayers. Effects of a distribution of graphene thicknesses on this method of thickness determination are considered.

Keywords

graphene thickness monitoring low-energy electron diffraction SiC epitaxial graphene in-situ monitoring LEED intensity ratio

Cite

@article{arxiv.1002.0997,
  title  = {Thickness monitoring of graphene on SiC using low-energy electron diffraction},
  author = {P. J. Fisher and Luxmi and N. Srivastava and S. Nie and R. M. Feenstra},
  journal= {arXiv preprint arXiv:1002.0997},
  year   = {2010}
}

Comments

To appear in J. Vac. Sci. Technol. A

Thickness monitoring of graphene on SiC using low-energy electron diffraction

Abstract

Keywords

Cite

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