Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)

M. Copel; S. Oida; A. Kasry; A. A. Bol; J. B. Hannon; R. M. Tromp

doi:10.1063/1.3565968

Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)

Materials Science 2011-08-11 v1

Authors: M. Copel , S. Oida , A. Kasry , A. A. Bol , J. B. Hannon , R. M. Tromp

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Abstract

Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope labeling it is possible to tag graphene generated from reacted ethylene. Furthermore, we are able to analyze graphene supported by oxidized Si(100) substrates, allowing the study of graphene films grown by chemical vapor deposition on metal and transfered to silicon. This introduces a powerful method to explore the fundamentals of graphene formation.

Keywords

graphene medium energy ion scattering depth profiling SiC Si(100) isotope labeling chemical vapor deposition

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@article{arxiv.1102.0675,
  title  = {Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)},
  author = {M. Copel and S. Oida and A. Kasry and A. A. Bol and J. B. Hannon and R. M. Tromp},
  journal= {arXiv preprint arXiv:1102.0675},
  year   = {2011}
}

Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)

Abstract

Keywords

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