English

Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations

Mesoscale and Nanoscale Physics 2017-09-22 v1

Abstract

In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe2_2 on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe2_2--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe2_2 states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe2_2 electron reflectivity.

Keywords

Cite

@article{arxiv.1606.04167,
  title  = {Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations},
  author = {Sergio C. de la Barrera and Yu-Chuan Lin and Sarah M. Eichfeld and Joshua A. Robinson and Qin Gao and Michael Widom and Randall M. Feenstra},
  journal= {arXiv preprint arXiv:1606.04167},
  year   = {2017}
}

Comments

15 pages, 7 figures