Silicon-On-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performance: A Two-Dimensional Simulation Study
Materials Science
2010-08-19 v1
Abstract
In this paper, we demonstrate that the performance of silicon Schottky rectifiers on SOI can be significantly improved using a Lateral Dual Sidewall Schottky (LDSS) concept. Our results based on numerical simulation show that the LDSS structure on SOI has low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier.
Cite
@article{arxiv.1008.3029,
title = {Silicon-On-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performance: A Two-Dimensional Simulation Study},
author = {M. Jagadesh Kumar and C. Linga Reddy},
journal= {arXiv preprint arXiv:1008.3029},
year = {2010}
}
Comments
http://web.iitd.ac.in/~mamidala/