相关论文: Optical loss and lasing characteristics of high-qu…
Whispering gallery modes in GaAs disk resonators reach half a million of optical quality factor. These high Qs remain still well below the ultimate design limit set by bending losses. Here we investigate the origin of residual optical…
Measured and calculated results are presented on the emission properties of a new class of emitters operating in the cavity quantum electrodynamics regime. The structures are based on high-finesse GaAs/AlAs micropillar cavities, each with…
Recent experiments demonstrated that GaAs-AlAs based micropillar cavities are promising systems for quantum optomechanics, allowing the simultaneous three-dimensional confinement of near-infrared photons and acoustic phonons in the 18-100…
We present an approach to the molecular-beam epitaxy of high-Q planar GaAs-based microcavities in which the AlGaAs high-index layers of the distributed Bragg reflectors (DBRs) are replaced by short-period GaAs/AlAs superlattices (digital…
Detections of gravitational waves (GW) in the frequency band 35 Hz to 500 Hz have led to the birth of GW astronomy. Expected signals above 500 Hz, such as the quasinormal modes of lower mass black holes and neutron star mergers signatures…
The ultrafast scattering dynamics of intersubband polaritons in dispersive cavities embedding GaAs/AlGaAs quantum wells are studied directly within their band structure using a non-collinear pump-probe geometry with phase-stable…
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range.…
Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. The results for cases of 2-QW (2 Quantum Wells) and 3-QW structures…
A detailed experimental analysis of the impact of active region design on the performance of 1300 nm lasers based on InGaAs/InAlGaAs superlattices is presented. Three different types of superlattice active regions and waveguide layer…
We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the…
We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse…
A system for studying microcavity resonators at cryogenic temperatures (~10 K) through evanescent coupling via optical fiber taper waveguides is reported, and efficient fiber coupling to AlGaAs microdisk cavities with embedded quantum dots…
We present investigations on the coherence of the emission from the polarization split fundamental mode of an AlGaInAs/GaAs quantum-dot microcavity laser. Using polarization insensitive measurements of the first-order field-correlation…
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the…
We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors $ > 2.8\times10^{5}$ and mode volumes $< 10 (\lambda/n)^3$, and study their nonlinear and optomechanical properties. For optical intensities up…
As superconducting kinetic inductance detectors (KIDs) continue to grow in popularity for sensitive submillimeter detection and other applications, there is a drive to advance toward lower-loss devices. We present measurements of diagnostic…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
We investigate gram scale macroscopic bulk acoustic wave (BAW) resonators manufactured from plates of piezoelectric lithium niobate. The intrinsic competing loss mechanisms were studied at cryogenic temperature through precision…
Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With…
The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin…