相关论文: Lindhard Factors and Concentrations of Primary Def…

The utilisation of semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications or in medicine and industry, necessitates to obtain radiation harder…

A phenomenological model was developed to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation, the kinetics of their evolution toward equilibrium and their influence on…

The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The…

The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the…

The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…

The influence of oxygen and carbon impurities on the concentrations of defects in silicon for detector uses, in complex fields of radiation, characteristic to high energy physics experiments, is investigated in the frame of the quantitative…

There exists an enormous interest for the study of very high energy domain in particle physics, both theoretically and experimentally, in the aim to construct a general theory of the fundamental constituents of matter and of their…

Halide perovskites have been extensively studied as materials of interest for optoelectronic applications. There is a major emphasis on ways to tailor the stability, defect behavior, electronic band structure, and optical absorption in…

Silicon Photo-multipliers (SiPMs) are very sensitive photo-detectors that experienced a big development in the last years in several applications, like LIDAR, astrophysics, medical imaging and high energy physics (HEP) experiments. In HEP…

Silicon detector technologies are often employed for high energy particle physics applications due to their excellent radiation hardness. Radiation damage in the form of bulk or substrate damage is dependent on the incident particle species…

In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is…

We estimate the hardness factors and the equivalent 1 MeV neutron fluences for hadrons fluences expected at the GaAs positions wheels in the ATLAS Inner Detector. On this basis the degradation of the GaAs particle detectors made from…

Defects influence the properties and functionality of all crystalline materials. For instance, point defects participate in electronic (e.g. carrier generation and recombination) and optical (e.g. absorption and emission) processes critical…

The scheduled High Luminosity upgrade of the CERN Large Hadron Collider presents new challenges in terms of radiation hardness. As a consequence, campaigns to qualify the radiation hardness of detector sensors and components are undertaken…

First-principles calculations rely heavily on pseudopotentials, yet their impact on accuracy is hardly addressed. In this work, we show that most pseudopotentials to date introduce errors, which manifest themselves as errors of atomic…

Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the…

We derive from first principles an accurate homogenized description of periodic metamaterials made of magnetodielectric inclusions, highlighting and overcoming relevant limitations of standard homogenization methods. We obtain closed-form…

An approach to calculate radiative corrections to unpolarized cross section of semi-inclusive electroproduction is developed. An explicit formulae for the lowest order QED radiative correction are presented. Detailed numerical analysis is…

We develop a practical first-principles methodology to determine nonradiative carrier capture coefficients at defects in semiconductors. We consider transitions that occur via multiphonon emission. Parameters in the theory, including…

These notes contain a rapid overview of the methods and results obtained in the field of propagation of waves in disordered media. The case of Schr\"odinger and Helmholtz equations are considered that describe respectively electrons in…